********************************************************************************
* UnitedSiC G3 650V-80mohm SiC Cascode Spice Circuit Model v2.3
* Copyright 2020 United Silicon Carbide, Inc.
* This is a PRELIMINARY Spice Model of UF3C065080B7S
*
*
* The model does not include all possible conditions and effects, 
* in particular it doesn't include: 
*	Self heating
*	leakage current in blocking state
*	Drain to source breakdown is notional only
*
********************************************************************************

*** UF3C065080B7S ***
.subckt UF3C065080B7S nd ng ns nss
Ld	nd	nd1		3n
Lmd	ns1	nd2		2n
Ljg	ng1	ns3		1n
Lmg ng ng2 		10n
Lms	ns2	ns3		2n
Ls	ns3	ns		2n
xj1	nd1	ng1	ns1	jfet_G3_650V_Ron params: Ron=75m Rgon=1.3 Rgoff=1.3
xm1	nd2	ng2	ns2	mfet164a
Rss ns2 nss     1u
.ends
 
*** 650V JFETs ***
.subckt jfet_G3_650V_Ron d g s params: Ron=0 Rgon=0 Rgoff=0
*#ASSOC Category="N-Channel JFET" Symbol=njfet
.param Ron1={Ron}
.param Rgon1={Rgon}
.param Rgoff1={Rgoff}
.param a= {75m/{Ron1}}
X1 di gi s jfet_G3_650V params: ascale={a}
XCgs gi s Cgs_650V params: acgs={a}
XCgd gi di Cgd_650V params: acgd={a}
Cgdex gi di {25p * {a} }	
Cgsex gi s {80p * {a} }					
Rd d di Rtemp {50m/{a}}
.MODEL Rtemp RES (TC1=2.112e-3, TC2=3.6244e-5)
GRg g gi value={if(v(g,gi)>0,v(g,gi)/{Rgon1},v(g,gi)/{Rgoff1})}
.ends jfet_G3_650V_Ron

*** Shared Subcircuit for 650V JFETs ***
.subckt jfet_G3_650V d g s Params: ascale=0
.param Fc1=0.5
.param Pb1=3.25
.param M1=0.5
.param Vd0=400
.param gos={0.0178*{ascale}}
.param gfs={23.5*{ascale}}
.param f=1.763
.param vth=-10

.param cgs1=0.375n
.param cgd1=0.0404n

.param bt={({f}*{gfs}+2*{gos}*{Vd0}/{vth})/2/(-{vth})}
.param lamd={1*{gos}/{bt}/{vth}/{vth}}
.param cgs0={pwr((1+30/{Pb1}),{M1})*{cgs1}}
.param cgd0={pwr((1+{Vd0}/{Pb1}),{M1})*{cgd1}}

J1 d g s jfet_650
Dgs g s Dgs_iv 
Dgd g d Dgd_iv 
Rgs  g s 1Meg
Rgd  g  d 10Meg

.MODEL jfet_650 NJF(
+ Beta={bt} BetaTce=0 Vto={vth} VtoTc=0  lambda={lamd}
+ Is=1e-60 
+ Cgs={{cgs0}*{ascale}} Cgd={{cgd0}*{ascale}} Fc={Fc1} Pb={Pb1}
+ M={M1})

.MODEL Dgs_iv D (CJO=0 BV=40 IS=1e-50 ISR=1e-50 Eg=3.5 Rs=0)
.MODEL Dgd_iv D (CJO=0 BV=850 IBV=1m IS=1e-50 ISR=1e-50 Eg=3.5 Rs={15.1m/{ascale}})
.ends jfet_G3_650V

* Cgs network	
.subckt Cgs_650V g s params: acgs=0
.param c0=1n
.param vsgmin=-2
.param vsgmax=15
.param a1={0.25n*{acgs}}
.param b1=1
.func Qgs1(u) {- {a1} / {b1} *(exp(- {b1} *u)-1)}  

.param a2={0.35n*{acgs}}
.param b2=0.5
.param c2=8.7
				
.func Qgs2(u) 
+	{if(abs(u)<{vsgmax},
+	{a2}*u + {a2}*(-{b2})*log(cosh((u-{c2})/-{b2}))
+	-{a2}*(-{b2})*log(cosh(-{c2}/-{b2})), 
+	{a2}*{vsgmax} + {a2}*(-{b2})*log(cosh(({vsgmax}-{c2})/-{b2}))
+	-{a2}*(-{b2})*log(cosh(-{c2}/-{b2})))} 
				
E1 s m1 value={v(s,g)-Qgs1(v(s,g))/{c0}}
C01 m1 g {c0}
E2 s m2 value={v(s,g)-Qgs2(limit(v(s,g),-{vsgmax},{vsgmax}))/{c0}}
C02 m2 g {c0}

.ends Cgs_650V

* Cgd network
.subckt Cgd_650V g d params:acgd=0

.param c0=1n

.param a1={0.2n*{acgd}}
.param b1=0.6
.param c1=19
.param vdgmax1=30

.func Qgd1(u) 
+	{if(abs(u)<{vdgmax1},
+	{a1}*u + {a1}*(-{b1})*log(cosh((u-{c1})/-{b1}))
+	-{a1}*(-{b1})*log(cosh(-{c1}/-{b1})), 
+	{a1}*{vdgmax1} + {a1}*(-{b1})*log(cosh(({vdgmax1}-{c1})/-{b1}))
+	-{a1}*(-{b1})*log(cosh(-{c1}/-{b1})))} 

.param a2={0*{acgd}}
.param b2=0.5
.param c2=9.5
.param vdgmax2=15

.func Qgd2(u) 
+	{if(abs(u)<{vdgmax2},
+	(-1)*({a2}*u + {a2}*(-{b2})*log(cosh((u-{c2})/-{b2}))
+	-{a2}*(-{b2})*log(cosh(-{c2}/-{b2}))), 
+	(-1)*({a2}*{vdgmax2} + {a2}*(-{b2})*log(cosh(({vdgmax2}-{c2})/-{b2}))
+	-{a2}*(-{b2})*log(cosh(-{c2}/-{b2}))))}


E1 d m1 value={v(d,g)-Qgd1(limit(v(d,g),-{vdgmax1},+{vdgmax1}))/{c0}}
C01 m1 g {c0}
E2 d m2 value={v(d,g)-Qgd2(limit(v(d,g),-{vdgmax2},+{vdgmax2}))/{c0}}
C02 m2 g {c0}

.ends Cgd_650V

*** Si MOS Model ***
.SUBCKT	mfet164a	 4 1 2	
							
*Gate-->1  Drain-->4  Src-->2									
.param Ascale=		0.895							
***Ascale used to scale the active area of the mosfet.It could be any positive data									
M1  3 5 9 9 NMOS W={	{Ascale}*	2		}	L=	0.00000033		
M2  9 5 9 3 PMOS W={	{Ascale}*	2	}	L=	0.00000036
Ld 4 7 0.1p									
Ls 9 2 0.1p									
Lg 1 8 0.1p									
R1 7 3 RTEMP {		0.0051021	/	{Ascale}	}				
RG 8 5 	4.2								
CGS 5 9	{	3.575E-10	*	{Ascale}	}				
DBD 9 3     DBD									
									
**************************************************************************************************************
.MODEL  NMOS       NMOS  (LEVEL  = 3 									
+ TOX    = 		6.00E-08							
+ NSUB   = 		3.8E+17							
+ VTO=		4.5							
+ THETA  = 		0							
+ kp= 		1.788E-05							
+ TPG = 1  )									
**************************************************************************************************************
.MODEL  PMOS       PMOS  (LEVEL  = 3 	
+ TOX    = 		6.00E-08	
+ NSUB   = 		4.8E+16		
+ TPG = -1  )	
**************************************************************************************************************
.MODEL DBD D (CJO={			{Ascale}	*	2.6E-10	}			
+ VJ= 	0.7								
+ M= 	0.5								
+ RS= 	{0.007/	{Ascale}	}						
+ IS= { {AScale} *		1.706E-12	}						
+ TT= 	8.00E-09								
+ BV= 	25								
+ IBV= 	0.00025	)							
**************************************************************************************************************
.MODEL RTEMP RES (TC1=3E-3)									
.ENDS

*** End of File ***
 
